| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can execute memory test in a short period of time under a plurality of test conditions. SOLUTION: The semiconductor storage device 10 comprises a memory section 1 having a plurality of memory cell groups C00 to Cnm, a redundant memory section 2 having a plurality of redundant memory cell groups, and a redundant circuit section 13 for activating the redundant memory cell groups in the redundant memory section 2 based on an address signal 101 for inhibiting access to the memory section 1 and accessing the memory cell group in the memory section 1. The redundant circuit section 13 switches between a normal mode for accessing the redundant memory section 2 and a redundant circuit deactivating mode for inhibiting access to the redundant memory section 2 based on a redundant circuit deactivating signal 100. COPYRIGHT: (C)2009,JPO&INPIT
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