| 发明名称 |
Through-Silicon Vias and Methods for Forming the Same |
| 摘要 |
An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.
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| 申请公布号 |
US2009102021(A1) |
申请公布日期 |
2009.04.23 |
| 申请号 |
US20070874009 |
申请日期 |
2007.10.17 |
| 申请人 |
CHEN CHIH-HUA;CHEN CHEN-SHIEN;KUO CHEN-CHENG;HSU KUO-CHING STEVEN;CHING KAI-MING |
发明人 |
CHEN CHIH-HUA;CHEN CHEN-SHIEN;KUO CHEN-CHENG;HSU KUO-CHING STEVEN;CHING KAI-MING |
| 分类号 |
H01L23/488;H01L21/44 |
主分类号 |
H01L23/488 |
| 代理机构 |
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