发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT WITH VARIABLE GAIN AMPLIFIER
摘要 The variable gain amplifier includes a bias circuit (BC) 1, a matching circuit (MC) 2, a variable gain resistive feedback amplifier (FA) 3 and an output follower (EA) 4. The resistance values of the load resistance Rc and feedback resistance Rf are changed in cooperation. In a case of making the load resistance Rc a high resistance to set the low noise amplifier to a high gain, the feedback resistance Rf is also made a high resistance, the feedback time constant taufb(c1)≈2pi.RfCbe/(1+gmRc) of the closed loop of the resistive negative feedback amplifier 3 becomes substantially constant, and then the amplifier has a gain small in frequency dependency over a wide bandwidth. In a case of making the load resistance Rc a low resistance to set the low noise amplifier to a low gain, the feedback resistance Rf is also made a low resistance. The feedback resistance Rf with the low resistance increases the negative feedback quantity, and thus the amplifier is set to a low gain. Also, the load resistance Rc is made a low resistance, and the feedback time constant taufb(c1) becomes substantially constant. The gain is not lowered further in a high frequency region.
申请公布号 US2009102552(A1) 申请公布日期 2009.04.23
申请号 US20080252554 申请日期 2008.10.16
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIRAMIZU NOBUHIRO;MASUDA TORU
分类号 H03F3/68 主分类号 H03F3/68
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