MEASUREMENT OF CRITICAL DIMENSIONS OF SEMICONDUCTOR WAFERS

摘要

A semiconductor wafer critical dimension measurement method comprising receiving (30) an image of a site of the semiconductor wafer comprising a plurality of features, processing (34) the image to measure at least one critical dimension of at least some of the features, analysing (36) the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and using (38) the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer.