| 摘要 |
PROBLEM TO BE SOLVED: To perform electron multiplication driving on a vertical charge transfer path by a CCD solid-state image pickup device in a short time. SOLUTION: Signal charges are stored in a well 41 between barriers 42 and 44 formed on a charge transfer path, a multiplication voltage is applied to a predetermined electrode as a multiplying electrode at a position beyond the barrier 42 among transfer electrodes constituting the charge transfer path to form a multiplying potential well 43 deeper than the well 41, and the barrier 42 is eliminated to cause the signal charges in the well 41 to fall in the potential well 43, thereby multiplying the signal charges. At this time, a voltage applied to the transfer electrode forming the barrier 44 is controlled so that the signal charges are extruded toward the potential well 43 using the barrier 44 (states T2 and T3). COPYRIGHT: (C)2009,JPO&INPIT
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