| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM type semiconductor storage device capable of suppressing an increase in manufacturing cost. SOLUTION: The SRAM type semiconductor storage device includes: a storage circuit, an access control circuit, a ground voltage supplying region, and a polysilicon portion 8 of a second conductive type. The storage circuit stores data. The access control circuit includes a first access transistor and a second access transistor and controls reading and writing of the data. The ground voltage supplying region supplies a ground voltage to the storage circuit and the access control circuit. The polysilicon portion 8 connects a first gate electrode included in the first access transistor and a second gate electrode included in the second access transistor. The ground voltage supplying region 15 is connected to a ground voltage supplying contact which supplies the ground voltage, and includes: a first portion composed of a semiconductor 22 of the second conductive type, and a second portion composed of a semiconductor 15 of a first conductive type. COPYRIGHT: (C)2009,JPO&INPIT |
