SEMICONDUCTOR ELEMENT AND METHOD FOR PROCESSING OF A SEMICONDUCTOR ELEMENT
摘要
A semiconductor element (10) comprises a first region (11) with a number of recesses (17, 20, 23) which extend from a first primary surface (13) of the semiconductor element (10) into a substrate (31) of the semiconductor element (1). In addition the semiconductor element (10) comprises a second region (12) in the first primary surface (13) which is surrounded by the first region (11).
申请公布号
WO2009050166(A2)
申请公布日期
2009.04.23
申请号
WO2008EP63799
申请日期
2008.10.14
申请人
AUSTRIAMICROSYSTEMS AG;KOPPITSCH, GUENTHER;STUECKLER, EWALD;ROHRACHER, KARL
发明人
KOPPITSCH, GUENTHER;STUECKLER, EWALD;ROHRACHER, KARL