| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can attain a higher breakdown voltage as compared with that of a conventional structure. SOLUTION: An annular deep trench 6 is formed in an N type epitaxial layer 5. In an element formation region 9 surrounded by the deep trench 6, a P type drain buffer region 10, a drain contact region 11 and a drift region 12 are formed in the top layer of the epitaxial layer 5. An N type body region 13 is formed in the top layer of the epitaxial layer 5 while being spaced apart from the drift region 12. In the top layer of the body region 13, a P type source region 14 is formed. In the epitaxial layer 5, a heavily doped embedded region 16 having an impurity concentration higher than that of the epitaxial layer 5 is formed between the deep trench 6 and a portion facing the source region 14 in the depth direction. COPYRIGHT: (C)2009,JPO&INPIT
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