| 摘要 |
PROBLEM TO BE SOLVED: To contribute to improvement in device characteristics by making it possible to set a resist size difference between an element formation region and an element isolation region during ion injection to be a desired value or below. SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming an element isolation groove to enclose the element formation region 102 of a semiconductor substrate 10; forming the element isolation region 103 by planarizing an insulating film 104 after embedding the insulating film 104 in the groove; forming a transistor by forming a gate insulating film 111, a gate electrode 112, and source/drain regions 114 and 115 in the element formation region 112; and forming a pattern of resist 121 to be a mask for ion injection across the element formation region 102 and element isolation region 121, wherein the thickness of the insulating film 104 is set to equal to or larger than a film thickness satisfying a desired breakdown voltage, and also set almost to the film thickness with which the difference between a resist size on the insulating film 104 and a resist size on the element formation region 102 has a minimum value. COPYRIGHT: (C)2009,JPO&INPIT
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