摘要 |
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors. |
申请人 |
APPLIED MATERIALS, INC.;BURROWS, BRIAN H.;TAM, ALEXANDER;STEVENS, RONALD;CHOI, KENRIC T.;FELSCH, JAMES D.;GRAYSON, JACOB;ACHARYA, SUMEDH;NIJHAWAN, SANDEEP;WASHINGTON, LORI D.;MYO, NYI O. |
发明人 |
BURROWS, BRIAN H.;TAM, ALEXANDER;STEVENS, RONALD;CHOI, KENRIC T.;FELSCH, JAMES D.;GRAYSON, JACOB;ACHARYA, SUMEDH;NIJHAWAN, SANDEEP;WASHINGTON, LORI D.;MYO, NYI O. |