发明名称 Semiconductor Image Sensing Device
摘要 A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.
申请公布号 US2009101914(A1) 申请公布日期 2009.04.23
申请号 US20070227159 申请日期 2007.05.08
申请人 HIROTSU FUSAYOSHI;HIROTSU JUNICHI 发明人 HIROTSU FUSAYOSHI;HIROTSU JUNICHI
分类号 H01L31/112 主分类号 H01L31/112
代理机构 代理人
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