TRANSISTOR FORMED WITH SELF-ALIGNED CONTACTS

摘要

The invention provides a method of manufacturing a transistor device, a transistor device, and a method for manufacturing an integrated circuit. In one aspect, the method of manufacturing a transistor device includes providing a gate structure over a substrate (110). An insulating layer (310) is formed over the gate structure, and openings (710) to the substrate are formed therein, thereby removing a portion of the gate structure. The openings are filled with a conductor (1410), thereby forming an interconnect.