NON-VOLATILE NANOCRYSTAL MEMORY AND METHOD THEREFOR
摘要
A nanocrystal non-volatile memory (NVM) (10) has a dielectric (22) between the control gate (26) and the nanocrystals (16) that has a nitrogen content sufficient to reduce the locations in the dielectric (22) where electrons can be trapped. This is achieved by grading the nitrogen concentration. The concentration of nitrogen is highest near the nanocrystals (16) where the concentration of electron/hole traps tend to be the highest and is reduced toward the control gate (26) where the concentration of electron/hole traps is lower. This has been found to have the beneficial effect of reducing the number of locations where charge can be trapped.
申请公布号
WO2006080999(A3)
申请公布日期
2009.04.23
申请号
WO2005US45207
申请日期
2005.12.14
申请人
FREESCALE SEMICONDUCTOR, INC.;RAO, RAJESH A.;MURALIDHAR, RAMACHANDRAN;WHITE, BRUCE E.
发明人
RAO, RAJESH A.;MURALIDHAR, RAMACHANDRAN;WHITE, BRUCE E.