发明名称 |
TWO-DIMENSIONAL PHOTONIC CRYSTAL LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a two-dimensional photonic crystal light emitting element capable of improving a manufacturing yield; and its manufacturing method. SOLUTION: This manufacturing method of this two-dimensional photonic crystal laser according to this invention executes the following processes. That is to say, the manufacturing method executes a process S20 of forming a GaN-based semiconductor layer on a substrate; a process S30 of forming an aluminum film on the GaN-based semiconductor layer; a process S40 of forming a resist film having a pattern on the aluminum film; a process S50 of forming a plurality of recessed parts constituting a two-dimensional diffraction grating on the GaN semiconductor layer by removing partial parts of the aluminum film and the GaN-based semiconductor layer by etching by using the resist film as a mask; a process S60 of removing the resist film and the aluminum film; and a process S70 of forming a GaN-based semiconductor layer 22 on the GaN-based semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009060036(A) |
申请公布日期 |
2009.03.19 |
申请号 |
JP20070228073 |
申请日期 |
2007.09.03 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KITABAYASHI HIROYUKI;SAITO HIROHISA;MATSUBARA HIDEKI;KATAYAMA KOJI |
分类号 |
H01S5/18 |
主分类号 |
H01S5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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