| 摘要 |
PROBLEM TO BE SOLVED: To prevent the short circuiting of silicon epitaxial layers adjacent to one another. SOLUTION: Recesses 13a are formed on the exposed surface of an active region 13 by digging the exposed surface of the active region 13 by dry or wet etching. Consequently, the side portions 12a of field oxide layers 12, which compose element isolation regions 12 is exposed and the circumferences of the recesses 13a, are surrounded by the side portions 12a of the field oxide layers. Subsequently, silicon epitaxial layers 19 are formed on the exposed surfaces of the active regions 13 having the recesses 13a. The exposed surfaces of the active regions has been dug, and both ends of the active regions 13 in the width direction have been surrounded by the walls of the field oxide layers, which can suppress the growth of the silicon epitaxial layers 19 in a lateral direction, and prevent short circuiting between the silicon epitaxial layers 19 and 19 adjacent to each other. COPYRIGHT: (C)2009,JPO&INPIT
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