发明名称 |
LAMINATED STRUCTURE, MAGNETIC OR ELECTRONIC DEVICE AND TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To grow an Fe<SB>3</SB>Si compound comprising iron Fe of a ferromagnetic element on a silicon-based semiconductor substrate as a crystal in manufacturing a spin electronic device composed by laminating a ferromagnetic phase on silicon. SOLUTION: Then, in order to improve composition controllability of an Fe<SB>3</SB>Si layer and form an ordered structure layer having a half metal structure, an Fe<SB>3</SB>Si magnetic layer is formed on a silicon substrate using a semiconductor substrate formed of SiC or having SiC on a surface. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009059960(A) |
申请公布日期 |
2009.03.19 |
申请号 |
JP20070226863 |
申请日期 |
2007.08.31 |
申请人 |
KANAGAWA PREFECTURE |
发明人 |
AKIYAMA KENSUKE;KANEKO SATOSHI;HIRABAYASHI YASUO |
分类号 |
H01F10/14;H01F10/32;H01L21/28;H01L29/417;H01L29/82 |
主分类号 |
H01F10/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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