发明名称 LAMINATED STRUCTURE, MAGNETIC OR ELECTRONIC DEVICE AND TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To grow an Fe<SB>3</SB>Si compound comprising iron Fe of a ferromagnetic element on a silicon-based semiconductor substrate as a crystal in manufacturing a spin electronic device composed by laminating a ferromagnetic phase on silicon. SOLUTION: Then, in order to improve composition controllability of an Fe<SB>3</SB>Si layer and form an ordered structure layer having a half metal structure, an Fe<SB>3</SB>Si magnetic layer is formed on a silicon substrate using a semiconductor substrate formed of SiC or having SiC on a surface. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009059960(A) 申请公布日期 2009.03.19
申请号 JP20070226863 申请日期 2007.08.31
申请人 KANAGAWA PREFECTURE 发明人 AKIYAMA KENSUKE;KANEKO SATOSHI;HIRABAYASHI YASUO
分类号 H01F10/14;H01F10/32;H01L21/28;H01L29/417;H01L29/82 主分类号 H01F10/14
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