| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device capable of suppressing degradation of multiplication efficiency of signal charges. SOLUTION: A CMOS image sensor (the imaging device) comprises a photodiode part 4 for generating electrons (the signal charges), an electron accumulation part 4a for accumulating the electrons, an electron multiplier part 3b for multiplying the electrons accumulated in the electron accumulation part 4a by making them collide with each other for ionization, and a potential control gate electrode 10 for controlling potential of the photodiode part 4 in at least multiplication operation and transfer operation of the electrons. COPYRIGHT: (C)2009,JPO&INPIT
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