| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a P-type MOSFET and an N-type MOSFET are different in structure from each other, a silicide electrode having a predetermined work function is formed as a gate electrode, a gate resistance is reduced and cost is reduced, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device has diffusion layers 102 formed on the surface of a semiconductor substrate 100 so as to sandwich a channel region 101, and a gate insulating film 103 formed on the channel region 101. A gate electrode 104 of the N-type MOSFET consists of a first nickel silicide layer 104a and a second nickel silicide layer 104b formed on the first nickel silicide layer 104a and having a high nickel content larger than that of the first nickel silicide layer 104a, and a gate electrode 104 of the P-type MOSFET consists of a third nickel silicide layer having a nickel content larger than that of the second nickel silicide layer 104b. COPYRIGHT: (C)2009,JPO&INPIT
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