发明名称 MAGNETRON SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus which equalizes erosion of a target. SOLUTION: In the magnetron sputtering apparatus, a substrate and the target are confronted each other in a reaction chamber, a magnetic field generating means is movably arranged at a rear face side of a backing plate to form a magnetic field to the target, a high voltage is applied between the substrate and the target to generate discharge, and a thin film is formed by depositing a constituent atom of a target material onto the substrate. The magnetic field generating means driven and operated along a rear face of the backing plate is constituted by a first permanent magnet 21A and a second permanent magnet 21B which are arranged so that directions of magnetic poles may be reverse in polarity, and a magnetization direction may face toward the rear face of the backing plate. Moreover, thicknesses of the permanent magnets which form magnetic fields in a direction intersecting a drive direction of the magnetic field generating means are made thinner than those of permanent magnets which form magnetic fields along the drive direction, by which magnetic field strength of the first permanent magnet and the second permanent magnet is set to be partially weak. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009057616(A) 申请公布日期 2009.03.19
申请号 JP20070227611 申请日期 2007.09.03
申请人 FUJI ELECTRIC SYSTEMS CO LTD 发明人 SAKAKIBARA YASUSHI
分类号 C23C14/35;C23C14/34;G11B5/851;H01L21/285 主分类号 C23C14/35
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