发明名称 |
METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS |
摘要 |
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
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申请公布号 |
US2009075472(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20070857760 |
申请日期 |
2007.09.19 |
申请人 |
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发明人 |
ARNOLD JOHN C.;BONILLA GRISELDA;COTE WILLIAM J.;DUBOIS GERAUD;EDELSTEIN DANIEL C.;GRILL ALFRED;HUANG ELBERT;MILLER ROBERT D.;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;RYAN E. TODD;SANKARAPANDIAN MUTHUMANICKAM;SPOONER TERRY A.;VOLKSEN WILLI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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