| 摘要 |
An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas "A" containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas "B" containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas "C" is supplied through the third supply hole 11C into the chamber 7. The oxygen gas "D" contacts the first raw material gas "E" before the oxygen gas is mixed with the second raw material gas "F" in the chamber 7.
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