| 摘要 |
PROBLEM TO BE SOLVED: To provide a thyristor having a high gate-cathode breakdown voltage. SOLUTION: On the first major surface of a first conductivity semiconductor substrate, a cathode region of a first conductivity impurity region, an anode region of a second conductivity impurity region surrounding the cathode region, and a mesa trench between the cathode region and the anode region are provided. On the second major surface of the semiconductor substrate, a gate region of a second conductivity impurity region, and a mesa trench having a depth reach the gate region from the first major surface are provided, a cathode metal electrode is provided in the cathode region on the first major surface, an anode metal electrode is provided in the anode region, and a gate metal electrode is provided on the gate region of the second major surface. Since a sufficient distance can be secured between the gate and the cathode in the thyristor, a high gate-cathode breakdown voltage can be ensured. COPYRIGHT: (C)2009,JPO&INPIT
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