发明名称 |
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact |
摘要 |
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
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申请公布号 |
US2009072301(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080313305 |
申请日期 |
2008.11.18 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
BHALLA ANUP;LUI SIK K. |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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