METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIALKOXY HAFNIUM AND ZIRCONIUM PRECURSORS

摘要

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II): wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (III): wherein M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.