FABRICATION METHOD OF ROOM TEMPERATURE OPERATING SINGLE ELECTRON NANO DEVICE

摘要

A normal temperature motion single-electron nano device and manufacturing method thereof are provided to control the tunneling barrier of the quantum dot with the voltage applied in the lower gate and to control the energy level of the quantum dot by the upper body gate. The conducting channel of the number nano meter scale is formed in the silicon layer(1) between the drain and the source. The lower layer gate oxidation film(4) is formed. The polysilicon layer(5) is evaporated. Resist patterns(6,7) of the micro-pattern of nanometer line width are formed vertical to the conductive channel. The etching process of micro-pattern resist patterns using as a mask is performed to form the lower gate. The upper body gate oxidation film(8) is laminated. The upper body gate(10) is formed. The impurity doping process is performed on the region except for the conductive channel. The metal pad field is formed in the source and drain.