摘要 |
<p>The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices.</p><p>The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices.</p><p>Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III- V compound semiconductors such as gallium arsenide and gallium phosphide, ll-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.</p> |