发明名称 Semiconductor devices comprising molybdenum oxide and their fabrication methods
摘要 <p>The present invention relates to semiconductor electronic devices including molybdenum oxide formed on substrates which consist of materials which are used in known semiconductor electronic devices.</p><p>The present invention relates to also a new method to fabricate said electronic devices on substrates made of materials which have been used in usual electronic and photonic devices.</p><p>Suitable substrates consist of materials such as element semiconductors such as silicon and germanium, III- V compound semiconductors such as gallium arsenide and gallium phosphide, ll-IV compound semiconductors such as zinc oxide, IV compound semiconductors, organic semiconductors, metal crystals and their derivatives or glasses.</p>
申请公布号 EP1684355(A3) 申请公布日期 2009.03.18
申请号 EP20060000614 申请日期 2006.01.12
申请人 KATODA, TAKASHI 发明人 KATODA, TAKASHI
分类号 H01L29/24;H01L29/73;H01L29/74;H01L29/76;H01L29/78;H01L29/80;H01L29/86 主分类号 H01L29/24
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