| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with output changed depending on cut states of fuses, in which the output after the fuse cutting can be realized with high accuracy prior to the fuse cutting. SOLUTION: The semiconductor memory device 1 includes at least one fuse circuit 11. The fuse circuit 11 comprises a fuse F11, a current source MND11, and a first transistor MP11. One terminal of the fuse F11 is connected to a first power source VCC and the other terminal is connected to a cutoff terminal FS11. The current source MND 11 is connected between a second power source GND and an output terminal S11. The first transistor MP11 is connected between the current source MND11 and the cutoff terminal S11, and the connection between the first power source VCC and the output terminal S11 is electrically cut off in accordance with a voltage supplied from the cutoff terminal FS11. COPYRIGHT: (C)2009,JPO&INPIT |
