| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress the occurrence of TPD and make memory cells fine. SOLUTION: The semiconductor device includes: an ONO film 20 including a charge storage layer 16 provided on a semiconductor substrate 10; a plurality of bit lines 12 provided extending in the semiconductor substrate 10; a plurality of inter-bit-line regions 23 as regions between adjacent bit lines 12; a plurality of gates 24 provided respectively on the ONO films 20 in the plurality of inter-bit-line regions 23 along the bit lines 12; and a plurality of word lines 22 electrically connected to the plurality of gates 24 provided in one inter-bit-line region 23, respectively, and provided extending crossing the bit lines 12, wherein word lines 22 connected to two gates 24, respectively, adjacent along the width of the bit lines 12, are different from each other, and a manufacturing method thereof is also provided. COPYRIGHT: (C)2009,JPO&INPIT |
