| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device that is operated uniformly in the entire N-type MOS transistor for protecting ESD even if wiring introduced to the transistor using multilayer interconnection including a high-melt-point metal is introduced from a direction vertical to the width direction of the channel of the transistor. SOLUTION: The N-type MOS transistor for protecting ESD has a structure integrating a plurality of transistors where a plurality of drain and source regions are arranged alternately and gate electrodes are arranged between the drain and source regions. In the N-type MOS transistor for protecting ESD, one or both of first metal wiring connected to the drain regions and first metal wiring connected to the source regions are connected to a plurality of layers of metal wiring other than the first metal wiring. The number of via holes for electrically connecting the first metal wiring to the plurality of layers of metal wiring other than the first metal wiring is increased as a distance of wiring from the outside to the N-type MOS transistor for protecting ESD becomes longer. COPYRIGHT: (C)2009,JPO&INPIT
|
