| 摘要 |
A solid-state imaging device 5 includes photoelectric conversion elements 51R, 51G, 51B; and photoelectric conversion elements 51r, 51g, 51b. An exposure period for the photoelectric conversion elements 51r, 51g, 51b is controlled shorter than that for the photoelectric conversion elements 51R, 51G, 51B. During the exposure period for the photoelectric conversion elements 51R, 51G, 51B, an imaging device driving section 10 applies a readout pulse to transfer electrodes V2, V6, reads out electric charges accumulated in the photoelectric conversion elements 51r, 51g, 51b into vertical electric charge transfer paths 54, and controls to start exposure of the photoelectric conversion element 51r, 51g, 51b. During a period from start of the exposure of the photoelectric conversion elements 51R, 51G, 51B to the applying of the readout pulse, the imaging device driving section 10 applies a transfer pulse of a low level to the transfer electrodes V1 to V8.
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