发明名称 |
Semiconductor Pressure Sensor and Method for Manufacturing Semiconductor Pressure Sensor |
摘要 |
A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.
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申请公布号 |
US2009056463(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080196367 |
申请日期 |
2008.08.22 |
申请人 |
MITSUMI ELECTRIC CO., LTD. |
发明人 |
FUJIOKA YASUHIDE |
分类号 |
G01L9/02;H01L21/00 |
主分类号 |
G01L9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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