| 摘要 |
PROBLEM TO BE SOLVED: To guarantee expected element properties (initial design) of a semiconductor element without depending on the layout of a stress-applied film for the semiconductor element. SOLUTION: In a circuit block 10, the same compressive stress as a second silicon nitride film 12 is applied to a first enclosed region 13, which means that a third silicon nitride film 15 is formed from the same materials under the same film forming conditions as the second silicon nitride film 12. Then, the same tensile stress as a first silicon nitride film 11 is applied to a second enclosed region 14, which means that a fourth silicon nitride film 16 is formed from the same materials under the same film forming conditions as the first silicon nitride film 11. COPYRIGHT: (C)2009,JPO&INPIT |
