发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS, VALVE DEVICE, CVD TREATMENT METHOD USING VALVE DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To significantly reduce burden in cleaning by preventing a solid film from being formed on a flow passage wall surface, and improve an operating rate of a semiconductor manufacturing apparatus. SOLUTION: The semiconductor manufacturing apparatus includes the valve device having a fixed part such as a valve box 2, and a movable part such as a valve body 9 arranged between a reaction chamber and an exhaust pump. A heater 31 for heating and maintaining the fixed part adjacent to a gas flow passage at higher than a coagulation temperature of a coagulated part contained in gas exhausted from the reaction chamber is provided on the fixed part of the valve device. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049430(A) 申请公布日期 2009.03.05
申请号 JP20080285726 申请日期 2008.11.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TOMEZUKA KOJI;FURUICHI MASAYOSHI
分类号 H01L21/02;C23C16/44;H01L21/205 主分类号 H01L21/02
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