发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS, VALVE DEVICE, CVD TREATMENT METHOD USING VALVE DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To significantly reduce burden in cleaning by preventing a solid film from being formed on a flow passage wall surface, and improve an operating rate of a semiconductor manufacturing apparatus. SOLUTION: The semiconductor manufacturing apparatus includes the valve device having a fixed part such as a valve box 2, and a movable part such as a valve body 9 arranged between a reaction chamber and an exhaust pump. A heater 31 for heating and maintaining the fixed part adjacent to a gas flow passage at higher than a coagulation temperature of a coagulated part contained in gas exhausted from the reaction chamber is provided on the fixed part of the valve device. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009049430(A) |
申请公布日期 |
2009.03.05 |
申请号 |
JP20080285726 |
申请日期 |
2008.11.06 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TOMEZUKA KOJI;FURUICHI MASAYOSHI |
分类号 |
H01L21/02;C23C16/44;H01L21/205 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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