| 摘要 |
PROBLEM TO BE SOLVED: To improve coverage characteristic and loading effect of a metal oxide film without increment in the amount of supply and supply period of an oxidizing agent. SOLUTION: The method for manufacturing semiconductor device includes the steps of carrying-in a wafer 200 into a processing chamber 201, forming an HfO<SB>2</SB>film on the wafer 200 by alternately supplying TEMAH and O<SB>3</SB>, under heating, into the processing chamber 201, and carrying-out the wafer 200 from the inside of the processing chamber 201. In the step of forming the HfO<SB>2</SB>film, heating temperature of TEMAH and heating temperature of O<SB>3</SB>are set to be different. COPYRIGHT: (C)2009,JPO&INPIT
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