发明名称 |
Semiconductor Wafer Re-Use in an Exfoliation Process Using Heat Treatment |
摘要 |
Methods and apparatus for re-using a semiconductor donor wafer in a semiconductor-on-insulator (SOI) fabrication process provide for: (a) subjecting a first implantation surface of a donor semiconductor wafer to an ion implantation process to create a first exfoliation layer of the donor semiconductor wafer; (b) bonding the first implantation surface of the first exfoliation layer to a first insulator substrate; (c) separating the first exfoliation layer from the donor semiconductor wafer, thereby exposing a first cleaved surface of the donor semiconductor wafer, the first cleaved surface having a first damage thickness; and (d) subjecting the first cleaved surface of the donor semiconductor wafer to one or more elevated temperatures over time to reduce the first damage thickness to a sufficient level to produce a second implantation surface.
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申请公布号 |
US2009061593(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080170797 |
申请日期 |
2008.07.10 |
申请人 |
GADKAREE KISHOR PURUSHOTTAM;STOCKER MARK ANDREW |
发明人 |
GADKAREE KISHOR PURUSHOTTAM;STOCKER MARK ANDREW |
分类号 |
H01L21/30;B32B17/06 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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