| 摘要 |
A method for manufacturing a semiconductor device, including etching exposed areas of a substrate using patterned nitride and insulating layers as an etch mask to form a trench in the substrate; forming a buffer layer in the trench; forming a stress-inducing layer by implanting ions into a region of the substrate around the trench using the patterned nitride and insulating layers as an ion implant mask; forming a device isolation region by filling the trench with an trench insulating layer; and removing the patterned nitride and insulating layers.
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