发明名称 |
VERFAHREN UND VORRICHTUNG ZUR ANALYSE VON TOPOLOGISCHEN MERKMALEN AUF EINER OBERFLÄCHE |
摘要 |
Disclosed is a method and apparatus for using far field scattered and diffracted light to determine whether a collection of topological features on a surface (e.g., a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a "baseline"). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio. |
申请公布号 |
DE69940315(D1) |
申请公布日期 |
2009.03.05 |
申请号 |
DE1999640315 |
申请日期 |
1999.06.10 |
申请人 |
KLA-TENCOR CORP. |
发明人 |
CHUANG, YUNG-HO;ARMSTRONG, JOSEPH J.;BROWN, DAVID L.;LIN, JASON Z.;TSAI, BIN-MING BENJAMIN |
分类号 |
G01B11/30;G01N21/00;G01N21/95;G01N21/956;H01L21/66 |
主分类号 |
G01B11/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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