| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory device in which variation in threshold voltage of a flash memory cell can be prevented/minimized while performing a high speed program, its programming method, a memory system including it, and a computer system. <P>SOLUTION: In embodiment of the invention, the programming method of the nonvolatile memory device having a charge storage layer, a memory device, and a system, perform at least one unit programming loop, but each unit programming loop applies a programming pulse to at least two pages, applies time delay to the at least two pages, and applies a verifying pulse to the at least two pages. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
