| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a program method of which the threshold fluctuation of a programmed cell does not occur. <P>SOLUTION: This NAND type nonvolatile semiconductor memory is equipped with: n-pieces of memory cells (n is an integer of≥3) connected in series to one another; first select gate transistors connected between one-side ends of the n-pieces of memory cells and a source line; second select gate transistors connected between the other ends of the n-pieces of memory cells and a bit line; and a driver for applying a first voltage to a control gate electrode of a selected first memory cell among the n-pieces of memory cells, applying a second voltage lower than the first voltage to a control gate electrode of a second memory cell adjacent to the first memory cell when programming, and applying a third voltage lower than the second voltage to a control gate electrode of a third memory cell other than first and second memory cells. Values of the first, second and third voltages are not lower than the values for turning on the n-pieces of memory cells irrespective of their thresholds. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
