| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of solving problems such as decrease of charge transfer capacity of a horizontal electric charge transfer passage, increase of power consumption and degradation of transfer efficiency even when increase of pixels is advanced without expanding the size of the horizontal electric charge transfer passage. SOLUTION: The solid-state imaging element includes: photoelectric conversion elements; a plurality of vertical electric charge transfer passages 1 that transfer, in a vertical direction Y, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage 2 that transfers, in a horizontal direction X orthogonal to the vertical direction Y, the electric charge transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage 2 includes a plurality of electric charge transferring stages each of which operates as a barrier region or an electric charge accumulating region according to a level of an applied voltage, and each of the plurality of electric charge transferring stages is connected to two of the vertical electric charge transfer passages 1. COPYRIGHT: (C)2009,JPO&INPIT |
