NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device that can be highly integrated without the use of an SOI substrate and can minimize interference between adjacent cells through an optimized construction thereof, and to provide a manufacturing method therefor. SOLUTION: The nonvolatile memory device comprises: a semiconductor substrate having a body and a pair of fins projecting upward from the body; an embedded insulating layer which is embedded between the pair of fins; a pair of floating gate electrodes that are formed on each outer side of the pair of fins to be higher than the pair of fins; and control gate electrodes formed on the pair of floating gate electrodes. COPYRIGHT: (C)2009,JPO&INPIT