| 摘要 |
PROBLEM TO BE SOLVED: To attain a method of manufacturing a semiconductor device which can suppress pit generation and hardly causes alteration of a resist, including when a chemical liquid is brought into contact with an insulating film regardless of the presence or absence of a P-N junction formed in a substrate. SOLUTION: The method of manufacturing a semiconductor device comprises a step (a) of forming a first insulating film 11 on a substrate 12, a step (c) of selectively removing the first insulating film 11 by wet etching, and a step (d) of forming a second insulating film 17 on a region of the substrate 12 having the insulating film 11 removed therefrom. In the step (c), illumination light of visible light or infrared light is applied onto the surface of the substrate 12 in a duration at least after the wet etching is started before a chemical liquid is brought into contact with the substrate. COPYRIGHT: (C)2009,JPO&INPIT
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