发明名称 SIMULATION METHOD AND SIMULATION PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a simulation method and a simulation program more accurately calculating indirect influence of a first calculation element on a second calculation element. SOLUTION: In the simulation method by segmenting a substance surface into a finite number of calculation elements and calculating accumulating rates and etching rates of respective elements to perform a simulation of a processing form of the substance surface, when calculating indirect influence of the first calculation element on the accumulating or etching rate of the second calculation element, the surface form of the first calculation element is corrected based on the structure of the surface around the first calculation element to calculate the indirect influence based on the corrected surface form of the first calculation element. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049110(A) 申请公布日期 2009.03.05
申请号 JP20070212418 申请日期 2007.08.16
申请人 TOSHIBA CORP 发明人 ICHIKAWA HISASHI;TAMAOKI NAOKI;TAKASE TOSHIAKI
分类号 H01L29/00 主分类号 H01L29/00
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