SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a gate-drain charge amount without increasing on-resistance. SOLUTION: In this semiconductor device 1, a base layer part of an epitaxial layer 3 forms an N-type region 4, and a P-type body region 5 in contact with the N-type region 4 is formed in the epitaxial layer 3. A trench 6 penetrates a body region 5 from a surface of the epitaxial layer 3, and its deepest part reaches the N-type region 4. A gate insulation film 7 is formed in the trench 6. A source region 9 is formed in a surface layer part of the epitaxial layer 3. Electrodes 81 and 82 constituting an gate electrode 8 are formed along a part of the gate insulation film 7 covering a side surface of the trench 6. In a part surrounded by the gate electrode 8 in a bottom part in the trench 6, an insulator 17 is embedded, and contacts a part of the gate insulation film 7 covering the bottom surface of the trench 6. COPYRIGHT: (C)2009,JPO&INPIT