发明名称 Semiconductor integrated circuit device and method of fabricating the same
摘要 A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.
申请公布号 US2009057899(A1) 申请公布日期 2009.03.05
申请号 US20080230429 申请日期 2008.08.28
申请人 发明人 CHEON KEON-YONG;OH TAE-SEOK;CHOI JONG-WON;OH SU-YOUNG
分类号 H01L21/60;H01L23/498 主分类号 H01L21/60
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