FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A fin field effect transistor and a method of manufacturing the same are provided to improve the property of the semiconductor device by reducing the GIDL(Gate Induced Drain Leakage) current. A fin field effect transistor comprises an active pin, a gate oxidation film(104), the first electrode(106b), the second electrode(108a), a source and drain extension region(110). The active pin is protruded from a substrate(100). The gate oxidation film is arranged on the active fin. The first and second electrodes are laminated on the active fin. The width of the first electrode is smaller than the width of the second electrode. The first electrode is arranged on the gate oxidation film. The second electrode is arranged on the first electrode. The source and drain diffusion regions are positioned on the active pin.