| 摘要 |
<p>A semiconductor device and method for manufacturing the same is provided to improve the property of the source and drain area by preventing a short circuit. A semiconductor device includes a semiconductor substrate(202), an element isolation film(204), a gate(212), and a dummy pattern(218). The element isolation film is installed on the substrate and defines active areas, and gates are arranged on active areas in order to expose the element isolation film between active areas. A dummy pattern is arranged between active areas on the element isolation film. A manufacturing method of the semiconductor device is comprised of the step: forming the semiconductor device by using the semiconductor substrate, element isolation film, gates, dummy pattern, silicon epitaxial layers and elevated source or the drain regions.</p> |
