| 摘要 |
<p>A manufacturing method of the semiconductor device is provided to prevent the short between the gate pattern and the landing plug by preventing the crack of the nitride films covering the side walls of the gate patterns. A manufacturing method of the semiconductor device comprises a step for forming a gate pattern on a substrate (31); a step for performing the selective oxidation; a step for performing the first pre processing; a step for forming a gate spacer(38); a step for performing the second pre-processing; and a step for forming the cell spacer. The gate patterns has conductive patterns(33A,33B), a hard mask pattern(34), and a gate capping film(35). The gate capping film and the hard mask pattern are the nitride film. The selective oxidation process is performed in order to form an oxide film(36) on the top of the substrate.</p> |
