SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to perform a high speed operation by performing a read/write operation of data according to a current sensing mode. In a unit cell(C), data is read/written by a high dielectric capacitor. A cell data sensing part(110) controls a current of a main bit line according to a sensing voltage of a sub bit line in a sensing operation of the data. A write control part(120) stores the data to a corresponding unit cell according to a current level supplied from the main bit line to sub bit line. A sensing amplifier compares and amplifies a data current and a reference current supplied from the main bit line. The write control part supplies a write voltage lower than a pumping voltage level and higher than a ground voltage level in writing the data to the main bit line.