发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
摘要 A manufacturing method and substrate processing apparatus of the semiconductor device are provided to promote the removal of the organic metal liquid raw material in the liquid raw material flow channel of vaporizer and to prevent the block within the liquid raw material flow channel. The substrate is taken within the process chamber(S1). The plural of reactants are supplied within the process chamber in the several times to process the substrate(S6,S7,S8,S9). The substrate after processing is carried out from the process chamber(S11). At least one of the reactants comprises the source gas vaporizing the liquid raw material in the evaporation portion. Whenever the evaporation operation is performed with predetermined count, the solvent of which the second flow rate is greater than the first flow rate flows to the evaporation portion.
申请公布号 KR20090023181(A) 申请公布日期 2009.03.04
申请号 KR20080083718 申请日期 2008.08.27
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HORII SADAYOSHI;IMAI YOSHINORI
分类号 H01L21/02;H01L21/20 主分类号 H01L21/02
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